(China (Mainland))
Product Summary
The 2SC2540 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in UHF band mobile radio applications. The 2SC2540 is used in 30 to 35 watts output power amplifiers in UHF band mobile radio applications.
Parametrics
2SC2540 absolute maximum ratings: (1)VCBO collector to base voltage: 35V; (2)VEBO emitter to base voltage: 4V; (3)VCEO collector to emitter voltage: 17V; (4)IC collector current: 10A; (5)PC colector dissipation: 4.5W; (6)Tj junction temperature: 175℃; (7)Tstg storage temperature: -55 to 175℃.
Features
2SC2540 features: (1)High power gain: Gpe≧8.2dB @ VCC=13.5V, f=175MHz, Pin=40W; (2)Emitter ballasted construction and gold metallization for high reliability and good performances; (3)Low thermal resistance ceramic package with flange; (4)Ability of withstand more than 20:1 load VSWR when operated at VCC=15.2V, Po=40W, f=175MHz, TC=25℃.
Diagrams
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 2SC2540 |
Other |
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Data Sheet |
Negotiable |
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2SC2000 |
Other |
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Data Sheet |
Negotiable |
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Data Sheet |
Negotiable |
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Toshiba |
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Data Sheet |
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Toshiba |
Transistors Bipolar (BJT) Transistor NPN, 120V, 0.8A |
Data Sheet |
Negotiable |
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2SC2148 |
Other |
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Data Sheet |
Negotiable |
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2SC2149 |
Other |
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Data Sheet |
Negotiable |
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