(China (Mainland))
Product Summary
The 2SK1058 is a silicon N-channel MOSFET for low frequency power amplifier.
Parametrics
2SK1058 absolute maximum ratings: (1)Drain to source voltage: 160 V; (2)Gate to source voltage VGSS: ±15 V; (3)Drain current ID: 7A; (4)Body to drain diode reverse drain current IDR: 7A; (5)Channel dissipation Pch: 100 W; (6)Channel temperature Tch: 150 ℃; (7)Storage temperature Tstg: –55 to +150℃.
Features
2SK1058 features: (1)Good frequency characteristic; (2)High speed switching; (3)Wide area of safe operation; (4)Enhancement-mode; (5)Good complementary characteristics; (6)Equipped with gate protection diodes; (7)Suitable for audio power amplifier.
Diagrams
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 2SK1058 |
Other |
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Negotiable |
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2SK1058-E |
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MOSFET N-CH 160V 7A TO-3P |
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