(China (Mainland))
Product Summary
The BLV99 is an NPN silicon RF power transistor. It is designed for Amplifier Applications up to 860 MHz.
Parametrics
BLV99 absolute maximum ratings: (1)IC: 300 mA; (2)VCBO: 45 V; (3)VCEO: 25 V; (4)VEBO: 3.5 V; (5)PDISS: 5.3 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 33 ℃/W.
Features
BLV99 features: (1)Gold Metallization; (2)Emitter Ballasting; (3)High Gain.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 BLV99/SL |
Other |
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Data Sheet |
Negotiable |
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BLV99SL |
TriQuint Semiconductor |
Transistors RF Bipolar Power RF Bipolar Trans |
Data Sheet |
Negotiable |
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