Product Summary
The SST39VF200A70-4C-EKE is a 128K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. Featuring high-performance Word-Program, the SST39VF200A70-4C-EKE provides a typical Word-Program time of 14 µsec. The SST39VF200A70-4C-EKE uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, they have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39VF200A70-4C-EKE is offered with a guaranteed typical endurance of 100,000 cycles.
Parametrics
SST39VF200A70-4C-EKE absolute maximum ratings: (1)Temperature Under Bias:-55℃ to +125℃; (2)Storage Temperature:-65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential:-0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential:-2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential:-0.5V to 13.2V; (6)Package Power Dissipation Capability (TA = 25℃):1.0W; (7)Surface Mount Solder Reflow Temperature1:260℃ for 10 seconds; (8)Output Short Circuit Current:50 mA.
Features
SST39VF200A70-4C-EKE features: (1)Organized as 128K x16; (2)Single Voltage Read and Write Operations:2.7V to 3.6V; (3)Superior Reliability:Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention; (4)Low Power Consumption(typical values at 14 MHz):Active Current: 9 mA (typical),Standby Current: 3 μA (typical); (5)Sector-Erase Capability:Uniform 2 KWord sectors; (6)Block-Erase Capability:Uniform 32 KWord blocks; (7)Fast Read Access Time:70 ns; (8)Latched Address and Data; (9)Fast Erase and Word-Program:Sector-Erase Time: 18 ms(typical),Block-Erase Time: 18 ms (typical),Chip-Erase Time: 70 ms (typical),Word-Program Time: 14 μs (typical),Chip Rewrite Time:2 seconds (typical); (10)Automatic Write Timing:Internal VPP Generation; (11)End-of-Write Detection:Toggle Bit,Data# Polling; (12)CMOS I/O Compatibility ; (13)JEDEC Standard:Flash EEPROM Pinouts and command sets.
Diagrams
SST308 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST308-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST308-T1 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST308-T1-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST309 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST309-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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