(China (Mainland))
Product Summary
The MRF1015MA is a microwave pulse power transistor. It is designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.
Parametrics
MRF1015MA absolute maximum ratings: (1)Collector–Emitter Voltage VCES: 60 Vdc; (2)Collector–Base Voltage VCBO: 60 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 1.0 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 17.5 Watts, Derate above 25℃: 100mW/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃.
Features
MRF1015MA features: (1)Guaranteed Performance @ 1090 MHz, 50 Vdc, Output Power = 15 Watts Peak, Minimum Gain = 10 dB; (2)100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR; (3)Industry Standard Package; (4)Nitride Passivated; (5)Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration; (6)Internal Input Matching for Broadband Operation; (7)Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
Diagrams
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MRF10120 |
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MRF10150 |
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