Product Summary

The 2SB817 is a PNP epitaxial planar silicon transistor which is used in 140V/12A AF 60W output applications.

Parametrics

2SB817 absolute maximum ratings: (1)Collector-to-base voltage: (-)160 V; (2)Collector-to-emitter voltage: (-)140 V; (3)Emitter-to-base voltage: (-)6 V; (4)Collector current: (-)12 V; (5)Collector current( pulse): (-)15 A; (6)Collector dissipation, Tc=25℃: 100 W; (7)Junction temperature: 150 ℃; (8)Storage temperature: -40 to +150℃.

Features

2SB817 features: (1)Capable of being mounted easily because of one-point fixing type plastic molded package (Inter-changeable with TO-3); (2)Wide ASO because of on-chip ballast resistance; (3)Good depenedence of fT on current and excellent high frequency responce.

Diagrams

2SB817 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SB817
2SB817

Other


Data Sheet

Negotiable 
2SB817E
2SB817E

Other


Data Sheet

Negotiable 
2SB817P
2SB817P

Other


Data Sheet

Negotiable