(China (Mainland))
Product Summary
The 2SB817 is a PNP epitaxial planar silicon transistor which is used in 140V/12A AF 60W output applications.
Parametrics
2SB817 absolute maximum ratings: (1)Collector-to-base voltage: (-)160 V; (2)Collector-to-emitter voltage: (-)140 V; (3)Emitter-to-base voltage: (-)6 V; (4)Collector current: (-)12 V; (5)Collector current( pulse): (-)15 A; (6)Collector dissipation, Tc=25℃: 100 W; (7)Junction temperature: 150 ℃; (8)Storage temperature: -40 to +150℃.
Features
2SB817 features: (1)Capable of being mounted easily because of one-point fixing type plastic molded package (Inter-changeable with TO-3); (2)Wide ASO because of on-chip ballast resistance; (3)Good depenedence of fT on current and excellent high frequency responce.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SB817 |
Other |
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Data Sheet |
Negotiable |
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2SB817E |
Other |
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Data Sheet |
Negotiable |
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2SB817P |
Other |
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Data Sheet |
Negotiable |
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