Product Summary
The 2SJ79 is a silicon P-channel MOSFET for high frequency and low frequency power amplifier, high speed switching.
Parametrics
2SJ79 absolute maximum ratings: (1)Drain to source voltage: -200 V; (2)Gate to source voltage VGSS: ±15 V; (3)Drain current ID: -500 mA; (4)Body to drain diode reverse drain current IDR: -500 mA; (5)Channel dissipation Pch: 1.75/30 W; (6)Channel temperature Tch: 150 ℃; (7)Storage temperature Tstg: –45 to +150℃.
Features
2SJ79 features: (1)Suitable for direct mounting; (2)High forward transfer admittance; (3)Excellent frequency response; (4)Enhancement-mode.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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2SJ79 |
Other |
Data Sheet |
Negotiable |
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