(China (Mainland))
Product Summary
The 2SK176 is a silicon N-Channel MOS FET.
Parametrics
2SK176 absolute maximum ratings: (1)Drain to source voltage VDSS: 250 V; (2)Gate to source voltage VGSS: ±30 V; (3)Drain current ID: 12 A; (4)Drain peak current ID(pulse): 48 A; (5)Body to drain diode reverse drain current IDR: 12 A; (6)Channel dissipation Pch: 75 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.
Features
2SK176 features: (1)Low on-resistance; (2)High speed switching; (3)Low drive current; (4)No secondary breakdown; (5)Suitable for switchingregulator, DC-DC converter.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SK1760 |
Other |
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Data Sheet |
Negotiable |
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2SK1761 |
Other |
|
Data Sheet |
Negotiable |
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|
2SK1762 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK1764 |
Other |
|
Data Sheet |
Negotiable |
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