Product Summary
The BLV21 is an NPN silicon RF power transistor. It is designed for Class C, 28 V High Band Applications up to 175 MHz.
Parametrics
BLV21 absolute maximum ratings: (1)IC: 1.75 A; (2)VCEO: 35 V; (3)VCES: 65 V; (4)VEBO: 4.0 V; (5)PDISS: 36 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 4.8 ℃/W.
Features
BLV21 features: (1)Common Emitter; (2)PG = 10 dB at 15 W/175 MHz; (3)Omnigold Metalization System.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() BLV21 |
![]() Advanced Semiconductor, Inc. |
![]() Transistors RF Bipolar Power RF Transistor |
![]() Data Sheet |
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Image | Part No | Mfg | Description | ![]() |
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![]() BLV20 |
![]() Advanced Semiconductor, Inc. |
![]() Transistors RF Bipolar Power RF Transistor |
![]() Data Sheet |
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![]() BLV2042 |
![]() Other |
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![]() Data Sheet |
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![]() BLV2044 |
![]() Other |
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![]() Data Sheet |
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![]() Data Sheet |
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![]() BLV2046 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BLV2047 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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