(China (Mainland))
Product Summary
The BLV25 is a N-P-N silicon planar epitaxial transistor, which is primarily for use in v.h.f.-f.m. broadcast transmitters.
Parametrics
BLV25 absolute maximum ratings: (1)Collector-emitter voltage (VBE = 0) peak value: max. 65 V; (2)Collector-emitter voltage (open base): max. 33 V; (3)Emitter-base voltage (open-collector): max. 4 V; (4)Collector current (average): max. 17.5 A; (5)Collector current (peak value); f > 1 MHz: max. 35 A; (6)R.F. power dissipation (f > 1 MHz); Tmb = 25 ℃: max. 220 W; (7)Storage temperature: -65 to +150 ℃; (8)Operating junction temperature: max. 200 ℃.
Features
BLV25 features: (1)internally matched input for wideband operation and high power gain; (2)multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile; (3)gold-metallization ensures excellent reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BLV25 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLV20 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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Data Sheet |
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