(China (Mainland))
Product Summary
The BLW32 is an NPN silicon RF power transistor. It is designed for Television Band IV & V Applications up to 860 MHz.
Parametrics
BLW32 absolute maximum ratings: (1)IC: 1.0 A; (2)VCBO: 50 V; (3)VCEO: 30 V; (4)VEBO: 4.0 V; (5)PDISS: 10.8 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 16 ℃/W.
Features
BLW32 features: (1)Common Emitter; (2)PG = 11 dB at 0.5 W/860 MHz; (3)Omnigold Metalization System.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLW32 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
BLW30 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BLW31 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BLW32 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
|
|
||||||||||||
|
BLW33 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BLW34 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
