(China (Mainland))
Product Summary
The BLW33 is an NPN silicon RF power transistor. It is designed for Television, Transmitters, and transposers Applications up to 860 MHz.
Parametrics
BLW33 absolute maximum ratings: (1)IC: 1.25 A; (2)VCES: 50 V; (3)VCEO: 30 V; (4)VEBO: 4.0 V; (5)PDISS: 19.4 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 9.0 ℃/W.
Features
BLW33 features: (1)Common Emitter; (2)PG = 10 dB at 1.0 W/860 MHz; (3)Omnigold Metalization System.
Diagrams
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 BLW33 |
Other |
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Data Sheet |
Negotiable |
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BLW30 |
Other |
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Data Sheet |
Negotiable |
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BLW31 |
Other |
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Data Sheet |
Negotiable |
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BLW32 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLW33 |
Other |
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Data Sheet |
Negotiable |
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BLW34 |
Other |
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Data Sheet |
Negotiable |
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