(China (Mainland))
Product Summary
The BLW60C is an NPN silicon RF power transistor. It is designed for 12.5 V High Band Applications up to 175 MHz.
Parametrics
BLW60C absolute maximum ratings: (1)IC: 9.0 A; (2)VCESM: 36 V; (3)VCEO: 16 V; (4)VEBO: 4.0 V; (5)PDISS: 100 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 1.75 ℃/W.
Features
BLW60C features: (1)Common Emitter; (2)PG = 5.0 dB at 45 W/175 MHz; (3)Omnigold Metalization System.
Diagrams
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| Image | Part No | Mfg | Description | |
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BLW60C |
Other |
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Data Sheet |
Negotiable |
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