(China (Mainland))
Product Summary
The BLW76 is an NPN silicon RF power transistor. It is designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band.
Parametrics
BLW76 absolute maximum ratings: (1)IC: 10 A; (2)VCB: 60 V; (3)VCE: 35 V; (4)PDISS: 140 W @ TC = 25 ℃; (5)TJ: -65 ℃ to +200 ℃; (6)TSTG: -65 ℃ to +150 ℃; (7)θJC: 1.05 ℃/W.
Features
BLW76 features: (1)PG = 18 dB min. at 75 W/30 MHz; (2)IMD3 = -30 dBc max. at 75 W (PEP); (3)Omnigold Metalization System.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLW76 |
TriQuint Semiconductor |
Transistors RF Bipolar Power RF Bipolar Trans |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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BLW75 |
Other |
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Data Sheet |
Negotiable |
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BLW76 |
TriQuint Semiconductor |
Transistors RF Bipolar Power RF Bipolar Trans |
Data Sheet |
Negotiable |
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BLW77 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLW78 |
Other |
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Data Sheet |
Negotiable |
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