Product Summary

The BLW78 is an NPN silicon planar epitaxial transistor intended for use in class-A, AB or B operated mobile, industrial and military transmitters in the h.f. and v.h.f. bands. The BLW78 is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. The BLW78 has a 1/2” flange envelope with a ceramic cap. All leads are isolated from the flange.

Parametrics

BLW78 absolute maximum ratings: (1)Collector-emitter voltage (VBE = 0) peak value VCESM: max. 70 V; (2)Collector-emitter voltage (open base) VCEO: max. 35 V; (3)Emitter-base voltage (open collector) VEBO: max. 4 V; (4)Collector current (average) IC(AV): max. 10 A; (5)Collector current (peak value); f > 1 MHz ICM: max. 25 A; (6)R.F. power dissipation (f > 1 MHz); Tmb = 25 ℃ Prf: max. 160 W; (7)Storage temperature Tstg: -65 to +150 ℃; (8)Operating junction temperature Tj max.: 200 ℃.

Features

BLW78 specifications: (1)Collector-emitter saturation voltage IC = 15 A; IB = 3 A VCEsat: typ. 2 V; (2)Transition frequency at f = 100 MHz -IE = 5 A; VCB = 28 V fT: typ. 370 MHz; -IE = 15 A; VCB = 28 V fT: typ. 350 MHz; (3)Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Cc: typ. 155 pF; (4)Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 28 V Cre: typ. 102 pF; (5)Collector-flange capacitance Ccf: typ. 3 pF.

Diagrams

BLW78 diagram

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BLW78
BLW78

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