(China (Mainland))
Product Summary
The FDS6676 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDS6676 has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Parametrics
FDS6676 absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ± 16 V; (3)Drain Current – Continuous: 14.5 A, Pulsed: 50 A; (4)Power Dissipation for Single Operation: 2.5 W; (5)Operating and Storage Junction Temperature Range: –55 to +175 ℃.
Features
FDS6676 features: (1)14.5 A, 30 V. RDS(ON) = 7 mW @ VGS = 10 V, RDS(ON) = 8 mW @ VGS = 4.5 V; (2)High performance trench technology for extremely low RDS(ON); (3)Low gate charge (45 nC typ); (4)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FDS6676 |
Fairchild Semiconductor |
MOSFET SO-8 |
Data Sheet |
Negotiable |
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FDS6676AS |
Fairchild Semiconductor |
MOSFET 30V NCH POWER TRENCH MOSFET |
Data Sheet |
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FDS6676S |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
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