(China (Mainland))
Product Summary
The IRF240 is a 200V, N-channel repetitive avalanche and dv/dt rated HEXFET transistor. The HEXFET technology is the key to International Rectifier advanced line of power MOSFET transistors. The IRF240 also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
Parametrics
IRF240 absolute maximum ratings: (1)Continuous Drain Current: 18 A; (2)Continuous Drain Current: 11 A; (3)Pulsed Drain Current: 72 A; (4)Max. Power Dissipation: 125 W; (5)Linear Derating Factor: 1.0 W/℃; (6)Gate-to-Source Voltage: ±20 V; (7)Single Pulse Avalanche Energy: 450 mJ; (8)Avalanche Current: 18 A; (9)Repetitive Avalanche Energy: 12.5 mJ; (10)Peak Diode Recovery dv/dt: 5.0 V/ns; (11)Operating Junction: -55 to 150℃; (12)Storage Temperature Range: -55 to 150℃; (13)Lead Temperature: 300℃ (0.063 in. (1.6mm) from case for 10s); (14)Weight: 11.5 (typical) g.
Features
IRF240 features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.
Diagrams
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IRF240SMD |
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