(China (Mainland))
Product Summary
The BLW34 is a N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. The BLW34 has a 1/4" capstan envelope with ceramic cap.
Parametrics
BLW34 absolute maximum ratings: (1)Collector-emitter voltage (VBE = 0) peak value: max. 50 V; (2)Collector-emitter voltage (open base): max. 30 V; (3)Emitter-base voltage (open-collector): max. 4 V; (4)Collector current (average): max. 2.25 A; (5)Collector current (peak value); f > 1 MHz: max. 3.5 A; (6)R.F. power dissipation (f > 1 MHz); Tmb = 25 ℃: max. 31 W; (7)Storage temperature: -65 to +150 ℃; (8)Operating junction temperature: max. 200 ℃.
Features
BLW34 characteristics: (1)Collector-emitter breakdown voltage, VBE = 0; IC = 25 mA: V(BR)CES > 50 V; (2)Collector-emitter breakdown voltage, open base; IC = 100 mA: V(BR)CEO > 30 V; (3)Emitter-base breakdown voltage, open collector; IE = 10 mA: V(BR)EBO > 4 V; (4)Collector cut-off current, VBE = 0; VCE = 36: V ICES < 2.0 mA; (5)Second breakdown energy; L = 25 mH; f = 50 Hz, open base: ESBO > 8 mJ, RBE = 10 W: ESBR > 5.0 mJ; (6)D.C. current gain: IC = 2,5 A; VCE = 5 V: typ. 40.
Diagrams
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 BLW34 |
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BLW31 |
Other |
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BLW32 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
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BLW33 |
Other |
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Data Sheet |
Negotiable |
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BLW34 |
Other |
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Negotiable |
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BLW30 |
Other |
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Data Sheet |
Negotiable |
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