(China (Mainland))
Product Summary
The IXTM20N60 is a MegaMOS FET. It is an N-Channel Enhancement Mode. Applications include: Switch-mode and resonant-mode, power supplies, Motor controls, Uninterruptible Power Supplies (UPS), DC choppers.
Parametrics
IXTM20N60 specifications: (1)VDSS: 600 V; (2)VDGR: 600 V; (3)VGS: ±20 V; (4)VGSM: ±30 V; (5)ID25: 20 A; (6)IDM: 80 A; (7)PD: 300 W; (8)TJ: -55 to +150 ℃; (9)TJM: 150 ℃; (10)Tstg: -55 to +150 ℃; (11)Md: 1.13/10 Nm/lb.in.; (12)Weight: TO-204 = 18 g, TO-247 = 6 g; (13)Maximum lead temperature for soldering: 300 ℃.
Features
IXTM20N60 features: (1)International standard packages; (2)Low RDS (on) HDMOS process; (3)Rugged polysilicon gate cell structure; (4)Low package inductance (< 5 nH)- easy to drive and to protect; (5)Fast switching times.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IXTM20N60 |
Other |
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Data Sheet |
Negotiable |
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Ixys |
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Data Sheet |
Negotiable |
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