Product Summary
The MJ15022 is a 16 A, 200 V NPN bipolar silicon power transistor which is a kind of PowerBase power transistor for high power audio output, disk head positioners and linear applications.
Parametrics
MJ15022 absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 200 Vdc; (2)Collector-Base Voltage VCBO: 350 Vdc; (3)Emitter-Base Voltage VEBO: 5.0 Vdc; (4)Collector-Emitter Voltage: 400 Vdc; (5)Collector Current, Continuous: 16 Adc; (6)Collector Current, Peak (Note 1): 30 Adc; (7)Base Current, Continuous IB: 5.0 Adc; (8)Total Power Dissipation @ TC = 25℃: 250 W; (9)Total Power Dissipation Derate Above 25℃: 1.43 W/℃; (10)Operating and Storage Junction Temperature Range:- 65 to +200℃.
Features
MJ15022 features: (1)High Safe Operating Area (100% Tested)-2 A @ 80 V; (2)High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc; (3)Pb-Free Packages are Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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MJ15022 |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 200V 250W NPN |
Data Sheet |
Negotiable |
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MJ15022G |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 200V 250W NPN |
Data Sheet |
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