Product Summary

The MRF433 is a silicon rf power transistor. It is designed primarily for application as complementary symmetry amplifiers in linear amplifiers from 2.0 to 30MHz.

Parametrics

MRF433 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 18 Vdc; (2)Collector–Base Voltage VCBO: 36 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current Continuous IC: 2.5 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 20Watts; Derate above 25℃: 114W/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃.

Features

MRF433 features: (1)Specified 12.5 Volt, 30 MHz Characteristics. Output Power = 12.5 W(PEP). Minimum Gain = 20 dB. Efficiency = 50%; (2)Intermodulation Distortion @ 12.5 W (PEP). IMD = -30 dB (Max).

Diagrams

MRF433 diagram

MRF403
MRF403


SW ROTARY 4P 2-3POS PC

Data Sheet

0-1: $6.60
1-10: $6.00
10-25: $5.85
25-50: $5.40
50-100: $5.10
100-250: $4.65
250-500: $4.35
500-1000: $3.99
1000-5000: $3.90
MRF403-RO
MRF403-RO

NKK Switches

Rotary Switches LO PROF SHFT 2-3 POS

Data Sheet

0-1: $6.86
1-25: $5.97
25-50: $5.86
50-100: $5.50
MRF406
MRF406

Other


Data Sheet

Negotiable 
MRF412
MRF412

Other


Data Sheet

Negotiable 
MRF421
MRF421

Other


Data Sheet

Negotiable 
MRF422
MRF422

M/A-COM Technology Solutions

Transistors RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB

Data Sheet

0-1: $46.18
1-10: $44.64
10-25: $43.10
25-50: $41.56