Product Summary

The SD1429-03 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. It withstands infinite VSWR at rated operating conditions.

Parametrics

SD1429-03 absolute maximum rateings: (1)VCBO: Collector-Base Voltage 36 V; (2)VCEO: Collector-Emitter Voltage 16 V; (3)VCES: Collector-Emitter Voltage 36 V; (4)VEBO: Emitter-Base Voltage 4.0 V; (5)IC: Collector Current 3.4 W; (6)Ptot: Total Power Dissipation 37.5 A; (7)TJ: Junction Temperature +200 °C; (8)TSTG: Storage Temperature -65 to +150 °C.

Features

SD1429-03 features: (1)470 MHz; (2)12.5 VOLTS; (3)POUT = 15.0 WATTS; (4)GP = 7.5 dB MINIMUM; (5)COMMON EMITTER CONFIGURATION.

Diagrams

SD1429-03 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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SD1429-3
SD1429-3

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SD1429
SD1429

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