Product Summary

The 2N1724 is a NPN silicon high power transistor.

Parametrics

2N1724 absolute maximum ratings: (1)Collector-Emitter Voltage: 80 Vdc; (2)Collector-Base Voltage: 175 Vdc; (3)Emitter-Base Voltage: 10 Vdc; (4)Collector Current: 5.0 Adc; (5)Total Power Dissipation: @ TA = +25 ℃: 3.0 W, @ TC = +100 ℃: 50 W; (6)Temperature Range: Operating: 175 ℃, Storage Junction: -65 to +200 ℃.

Features

2N1724 electrical characteristics: (1)Collector-Emitter Breakdown Voltage, IC = 200 mAdc: 80 Vdc; (2)Emitter-Base Breakdown Voltage, IE = 10 mAdc: 10 Vdc; (3)Collector-Emitter Cutoff Current, VCE = 60 Vdc: 300 mAdc; (4)Collector-Base Cutoff Current, VCB = 175 Vdc: 5.0 mAdc; (5)Emitter-Base Cutoff Current, VEB = 7.0 Vdc: 400 mAdc.

Diagrams

2N1724 Package Outline

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2N1724
2N1724

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
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Data Sheet

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