Product Summary
The 2N1724 is a NPN silicon high power transistor.
Parametrics
2N1724 absolute maximum ratings: (1)Collector-Emitter Voltage: 80 Vdc; (2)Collector-Base Voltage: 175 Vdc; (3)Emitter-Base Voltage: 10 Vdc; (4)Collector Current: 5.0 Adc; (5)Total Power Dissipation: @ TA = +25 ℃: 3.0 W, @ TC = +100 ℃: 50 W; (6)Temperature Range: Operating: 175 ℃, Storage Junction: -65 to +200 ℃.
Features
2N1724 electrical characteristics: (1)Collector-Emitter Breakdown Voltage, IC = 200 mAdc: 80 Vdc; (2)Emitter-Base Breakdown Voltage, IE = 10 mAdc: 10 Vdc; (3)Collector-Emitter Cutoff Current, VCE = 60 Vdc: 300 mAdc; (4)Collector-Base Cutoff Current, VCB = 175 Vdc: 5.0 mAdc; (5)Emitter-Base Cutoff Current, VEB = 7.0 Vdc: 400 mAdc.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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2N1724 |
Other |
Data Sheet |
Negotiable |
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Central Semiconductor |
Transistors Bipolar (BJT) NPN SS Power |
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STMicroelectronics |
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Data Sheet |
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2N1722 |
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Data Sheet |
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2N1724 |
Other |
Data Sheet |
Negotiable |
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THYRISTOR STUD 50V 70A TO-94 |
Data Sheet |
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2N1793 |
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Data Sheet |
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