Product Summary

The 2SC3021 is a silicon NPN epitaxial planar type transistor specifically designed for UHF power amplifiers applications. The 2SC3021 is used for output stage of 5W power amplifiers and drive stage of higher power amplifiers in UHF band.

Parametrics

2SC3021 absolute maximum ratings: (1)VCBO collector to base voltage: 35V; (2)VEBO emitter to base voltage: 4V; (3)VCEO collector to emitter voltage: 17V; (4)IC collector current: 2A; (5)PC colector dissipation: 20W; (6)Tj junction temperature: 175℃; (7)Tstg storage temperature: -55 to 175℃.

Features

2SC3021 features: (1)High power gain: Gpe≧7.6dB @ VCC=12.5V, f=520MHz, Pin=1.2W; (2)Emitter ballasted construction; (3)High ruggedness: ability to withstand more than 20:1 load VSWR when operated at VCC=15.2V, f=520MHz, Po=7W; (4)Flange type ceramic package; (5)Zin=2.2+j3.1Ω, Zout=6+j1.0Ω @ VCC=12.5V, f=520MHz, Po=7W.

Diagrams

2SC3021 dimensions

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2SC3324GRTE85LF
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2SC3328
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Data Sheet
Negotiable