(China (Mainland))
Product Summary
The 2SK60 is a Silicon N-Channel MOS FET for switching.
Parametrics
2SK60 absolute maximum ratings: (1)Drain to Source voltage, VDS: 80V; (2)Gate to Source voltage, VGSO: 20V; (3)Drain current, ID: ±0.5A; (4)Max drain current, IDP: ±1A; (5)Allowable power dissipation, PD: 1W; (6)Channel temperature, Tch: 150℃; (7)Storage temperature, Tstg: -55 to 150℃.
Features
2SK60 features: (1)Low ON-resistance RDS(on); (2)High-speed switching; (3)Allowing to be driven directly by CMOS and TTL; (4)Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 2SK601 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||
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2SK601 |
Other |
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Data Sheet |
Negotiable |
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2SK614 |
Other |
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Data Sheet |
Negotiable |
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2SK615 |
Other |
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Data Sheet |
Negotiable |
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2SK620 |
Other |
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Data Sheet |
Negotiable |
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2SK65 |
Other |
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Data Sheet |
Negotiable |
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2SK655 |
Other |
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Data Sheet |
Negotiable |
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