(China (Mainland))
Product Summary
The BC846B NPN transistor is in a SOT23 plastic package. The applications of the BC846B include General purpose switching and amplification.
Parametrics
BC846B absolute maximum ratings: (1)collector-base voltage open emitter: 80 V; (2)collector-emitter voltage open base: 65 V; (3)emitter-base voltage open collector: 6 V; (4)collector current (DC): 100 mA; (5)peak collector current: 200 mA; (6)peak base current: 200 mA; (7)total power dissipation Tamb ≤ 25 ℃: 250 mW; (8)storage temperature: -65 to +150 ℃; (9)junction temperature: - 150 ℃; (10)operating ambient temperature: -65 to +150 ℃.
Features
BC846B features: (1)Low current (max. 100 mA); (2)Low voltage (max. 65 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BC846B |
Taiwan Semiconductor |
Transistors Bipolar (BJT) Transistor 200mW |
Data Sheet |
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BC846B /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
Negotiable |
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BC846B,235 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
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BC846B_D87Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 NPN GP AMP |
Data Sheet |
Negotiable |
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 |
BC846B-7 |
Diodes Inc. |
Transistors Bipolar (BJT) NPN BIPOLAR |
Data Sheet |
Negotiable |
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BC846BDW1T1 |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 80V Dual NPN |
Data Sheet |
Negotiable |
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BC846BDW1T1G |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 80V Dual NPN |
Data Sheet |
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BC846BLT1 |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 80V NPN |
Data Sheet |
Negotiable |
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