Product Summary

The BLV11 is an NPN silicon RF power transistor. It is designed for Class C, 12.5 Volt operation in FM Amplifier Applications up to 250 MHz.

Parametrics

BLV11 absolute maximum ratings: (1)IC: 3.0 A; (2)VCB: 36 V; (3)VCE: 18 V; (4)PDISS: 37 W @ TC = 25 ℃; (5)TJ: -65 ℃ to +200 ℃; (6)TSTG: -65 ℃ to +150 ℃; (7)θJC: 4.6 ℃/W.

Features

BLV11 features: (1)PG = 9.0 dB Typical at 175 MHz; (2)Emitter Ballasting; (3)Omnigold Metalization System.

Diagrams

BLV11 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLV11
BLV11
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $39.60
1-10: $33.00
10-25: $29.70
25-50: $26.40
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLV10
BLV10
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $37.80
1-10: $31.50
10-25: $28.35
25-50: $25.20
BLV100
BLV100
Other

Data Sheet
Negotiable 
BLV103
BLV103
Other

Data Sheet
Negotiable 
BLV11
BLV11
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $39.60
1-10: $33.00
10-25: $29.70
25-50: $26.40
BLV12
BLV12
Other

Data Sheet
Negotiable 
BLV193
BLV193
Other

Data Sheet
Negotiable