Product Summary
The BLV30 is a NPN silicon RF power transistor. It is Designed for Television Band IV & V Applications up to 860 MHz.
Parametrics
BLV30 absolute maximum ratings: (1)IC: 1.5 A; (2)VCBO: 60 V; (3)VCEO: 30 V; (4)VEBO: 4.0 V; (5)PDISS: 15.9 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 10 ℃/W.
Features
BLV30 features: (1)Common Emitter; (2)PG = 10 dB at 2.0 W/860 MHz; (3)Omnigold Metalization System.
Diagrams
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![]() Transistors RF Bipolar Power RF Transistor |
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