Product Summary

The BLV30 is a NPN silicon RF power transistor. It is Designed for Television Band IV & V Applications up to 860 MHz.

Parametrics

BLV30 absolute maximum ratings: (1)IC: 1.5 A; (2)VCBO: 60 V; (3)VCEO: 30 V; (4)VEBO: 4.0 V; (5)PDISS: 15.9 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 10 ℃/W.

Features

BLV30 features: (1)Common Emitter; (2)PG = 10 dB at 2.0 W/860 MHz; (3)Omnigold Metalization System.

Diagrams

BLV30 package style

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLV30
BLV30
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLV30
BLV30
Other

Data Sheet
Negotiable 
BLV31
BLV31
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80
BLV32F
BLV32F
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $57.38
1-10: $52.65
10-25: $47.25
25-50: $41.85
BLV33
BLV33
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $70.13
1-10: $64.35
10-25: $57.75
25-50: $51.15
BLV34
BLV34
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80