Product Summary

The BLV30 is a NPN silicon RF power transistor. It is Designed for Television Band IV & V Applications up to 860 MHz.

Parametrics

BLV30 absolute maximum ratings: (1)IC: 1.5 A; (2)VCBO: 60 V; (3)VCEO: 30 V; (4)VEBO: 4.0 V; (5)PDISS: 15.9 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 10 ℃/W.

Features

BLV30 features: (1)Common Emitter; (2)PG = 10 dB at 2.0 W/860 MHz; (3)Omnigold Metalization System.

Diagrams

BLV30 package style

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BLV30
BLV30

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Data Sheet

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Image Part No Mfg Description Data Sheet Download Pricing
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BLV30
BLV30

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Data Sheet

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BLV31
BLV31

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80
BLV32F
BLV32F

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $57.38
1-10: $52.65
10-25: $47.25
25-50: $41.85
BLV33
BLV33

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $70.13
1-10: $64.35
10-25: $57.75
25-50: $51.15
BLV34
BLV34

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80