(China (Mainland))
Product Summary
The BLW31 is an NPN silicon RF power transistor. It is designed for 108-175 MHz applications. The BLW31 utilizes diffused emitter resistors to achieve good VSWR capability.
Parametrics
BLW31 absolute maximum ratings: (1)IC: 4.0 A; (2)VCBO: 36 V; (3)VCEO: 18 V; (4)VEBO: 4.0 V; (5)PDISS: 40 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 4.4 ℃/W.
Features
BLW31 features: (1)Common Emitter-Class-C; (2)PG = 10 dB at 30 W/150 MHz; (3)Omnigold Metalization System.
Diagrams
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 BLW31 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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BLW30 |
Other |
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Data Sheet |
Negotiable |
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BLW31 |
Other |
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Data Sheet |
Negotiable |
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BLW32 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLW33 |
Other |
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Data Sheet |
Negotiable |
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BLW34 |
Other |
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Data Sheet |
Negotiable |
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