(China (Mainland))
Product Summary
The BLW87 is an NPN silicon RF power transistor. It is designed for Class C, 12.5 V High Band Applications up to 175 MHz.
Parametrics
BLW87 absolute maximum ratings: (1)IC: 4.0 A; (2)VCBO: 36 V; (3)VCEO: 18 V; (4)VEBO: 4.0 V; (5)PDISS: 65 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 3.5 ℃/W.
Features
BLW87 features: (1)Common Emitter; (2)PG = 10 dB at 25 W/175 MHz; (3)Omnigold Metalization System.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLW87 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
BLW80 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BLW81 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BLW83 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BLW85 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
|
|
||||||||||||
|
BLW86 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
|
|
||||||||||||
|
BLW87 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
