Product Summary

The BLW97 is an NPN silicon RF power transistor. It is designed for High voltage applications up tp 30 MHz.

Parametrics

BLW97 absolute maximum ratings: (1)IC: 15 A; (2)VCESM: 65 V; (3)VCEO: 33 V; (4)VEBO: 4.0 V; (5)PDISS: 230 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 0.76 ℃/W.

Features

BLW97 features: (1)PG = 11.5 dB min. at 175 W/30 MHz; (2)IMD3 = -30 dBc max. at 175 W(PEP); (3)Omnigold Metalization System.

Diagrams

BLW97 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
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BLW97
BLW97

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
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BLW90
BLW90

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BLW96
BLW96

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Data Sheet

0-20: $99.90
BLW96/01,112
BLW96/01,112

NXP Semiconductors

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Data Sheet

0-28: $99.98
BLW97
BLW97

Other


Data Sheet

Negotiable 
BLW98
BLW98

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80