Product Summary
The BLW98 is an NPN silicon RF power transistor. It is designed for use in UHF amplifier applications up to 860 MHz.
Parametrics
BLW98 absolute maximum ratings: (1)IC: 2.0 A; (2)VCBO: 50 V; (3)PDISS: 21.5 W @ TC = 70℃; (4)TJ: -65 ℃ to +200 ℃; (5)TSTG: -65 ℃ to +150 ℃; (6)θJC: 6.0 ℃/W.
Features
BLW98 features: (1)PG = 16.5 dB Typical at 860 MHz; (2)Common Emitter; (3)Omnigold Metallization System.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() BLW98 |
![]() Advanced Semiconductor, Inc. |
![]() Transistors RF Bipolar Power RF Transistor |
![]() Data Sheet |
![]()
|
|
||||||||||||
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
![]() |
![]() BLW90 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() BLW96 |
![]() Advanced Semiconductor, Inc. |
![]() Transistors RF MOSFET Power RF Transistor |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() BLW96/01,112 |
![]() NXP Semiconductors |
![]() Transistors RF Bipolar Power Dual N-CH 340W 10mA |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() BLW97 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() BLW98 |
![]() Advanced Semiconductor, Inc. |
![]() Transistors RF Bipolar Power RF Transistor |
![]() Data Sheet |
![]()
|
|