(China (Mainland))
Product Summary
The MJL21193 is a PNP audio Bipolar silicon power transistor which utilizes Perforated Emitter technology for high power audio output, disk head positioners and linear applications.
Parametrics
MJL21193 absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 250 Vdc; (2)Collector-Base Voltage VCBO: 400 Vdc; (3)Emitter-Base Voltage VEBO: 5 Vdc; (4)Collector-Emitter Voltage - 1.5 V VCEX: 400 Vdc; (5)Collector Current- Continuous: 16 Adc; (6)Collector Current-Peak: 30 Adc; (7)Base Current- Continuous IB: 5 Adc; (8)Total Power Dissipation @ TC = 25℃: 20 0W; (9)Derate above 25℃: 1.43 W/℃; (10)Operating and Storage Junction Temperature Range: -65 to +150℃.
Features
MJL21193 features: (1)Total Harmonic Distortion Characterized; (2)High DC Current Gain-hFE = 25 Min @ IC = 8 Adc; (3)Excellent Gain Linearity; (4)High SOA: 2.25 A, 80 V, 1 Second; (5)These are Pb-Free Devices.
Diagrams
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 MJL21193 |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 250V 200W PNP |
Data Sheet |
Negotiable |
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MJL21193G |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 250V 200W PNP |
Data Sheet |
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