Product Summary
The BLV32 is a NPN silicon RF power transistor. It is designed for in linear v.h.f. amplifiers of television transmitters and transporters.
Parametrics
BLV32 absolute maximum ratings: (1)IC: 4.0 A; (2)VCBO: 60 V; (3)VCEO: 32 V; (4)VCES: 60 V; (5)VEBO: 4.0 V; (6)PDISS: 82 W @ TC = 25 ℃; (7)TJ: -65 ℃ to +200 ℃; (8)TSTG: -65 ℃ to +150 ℃; (9)θJC: 2.1 ℃/W.
Features
BLV32 features: (1)Diffused emitter ballasting resistors; (2)PG = 16 dB at 10 W/224 MHz; (3)Omnigold Metalization System.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BLV32F |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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BLV30 |
Other |
Data Sheet |
Negotiable |
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BLV31 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLV32F |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLV33 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLV34 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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