(China (Mainland))
Product Summary
The BLW30 is an NPN silicon planar epitaxial transistor encapsulated in a 4-lead 3/8 inch SOT120 capstan envelope with a ceramic cap. The BLW30 is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the stud.
Parametrics
BLW30 absolute maximum ratings: (1)VCBO collector-base voltage: 36 V; (2)VCEO collector-emitter voltage: 16 V; (3)VEBO emitter-base voltage: 3 V; (4)IC, IC(AV) collector current: 6 A; (5)ICM collector current: 18 A; (6)Ptot total power dissipation: 100 W; (7)Tstg storage temperature range: -65 to 150 ℃; (8)Tj junction operating temperature: 200 ℃.
Features
BLW30 features: (1)Emitter-ballasting resistors for an optimum temperature profile; (2)Excellent reliability; (3)Withstands full load mismatch.
Diagrams
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 BLW30 |
Other |
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Data Sheet |
Negotiable |
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BLW30 |
Other |
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Data Sheet |
Negotiable |
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BLW31 |
Other |
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Data Sheet |
Negotiable |
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BLW32 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
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BLW33 |
Other |
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Data Sheet |
Negotiable |
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BLW34 |
Other |
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Data Sheet |
Negotiable |
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