Product Summary

The BLW96 is an NPN silicon RF power transistor. It is designed for High Linearity Class A, AB HF Power Amplifier Applications up to 30 MHz.

Parametrics

BLW96 absolute maximum ratings: (1)IC: 12 A; (2)VEES: 110 V; (3)VCEO: 55 V; (4)VEBO: 4.0 V; (5)PDISS: 320 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 0.7 ℃/W.

Features

BLW96 features: (1)PG = 14 dB Typical at 200 W/28 MHz; (2)IMD3 = -32 dBc Typ. at 220 W(PEP); (3)Omnigold Metalization System.

Diagrams

BLW96 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLW96
BLW96

Advanced Semiconductor, Inc.

Transistors RF MOSFET Power RF Transistor

Data Sheet

0-20: $99.90
BLW96/01,112
BLW96/01,112

NXP Semiconductors

Transistors RF Bipolar Power Dual N-CH 340W 10mA

Data Sheet

0-28: $99.98