(China (Mainland))
Product Summary
The FDN336P P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. The FDN336P is well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.
Parametrics
FDN336P absolute maximum ratings: (1)Drain-Source Voltage, VDSS: –20V; (2)Gate-Source Voltage, VGSS: ±8V; (3)Drain Current, Continuous, ID: 1.3A; (4)Drain Current, Pulsed, ID: 10A; (5)Maximum Power Dissipation, PD: 0.5W; (6)Maximum Power Dissipation, PD: 0.46W; (7)Operating and Storage Junction Temperature Range, TJ, TSTG: –55 to +150℃.
Features
FDN336P features: (1)–1.3A, –20V. RDS(ON) = 0.20Ω @ VGS = –4.5V RDS(ON) = 0.27Ω @ VGS = –2.5V; (2)Low gate charge (3.6 nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FDN336P |
Fairchild Semiconductor |
MOSFET SSOT-3 P-CH -20V |
Data Sheet |
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FDN336P-NL |
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MOSFET P-CH 20V 1.3A SSOT-3 |
Data Sheet |
Negotiable |
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