(China (Mainland))
Product Summary
The MJ15025 is a silicon pnp power transistor.
Parametrics
MJ15025 absolute maximum ratings: (1)VEBO Emitter-base voltage Open collector: -5 V; (2)IC Collector current: -16 A; (3)ICM Collector current-peak: -30 A; (4)IB Base current: -5 A; (5)PD Total power dissipation TC=25: 250 W; (6)Tj Junction temperature: 150℃; (7)Tstg Storage temperature: -65~200℃.
Features
MJ15025 features: (1)With TO-3 package; (2)Complement to type; (3)Excellent safe operating area; (4)High DC current gain hFE = 15 (Min) @ IC = 8 Adc.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MJ15025 |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 250V 250W PNP |
Data Sheet |
Negotiable |
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MJ15025G |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 250V 250W PNP |
Data Sheet |
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