Product Summary

The MJ21195 is a 16 A, 250 V PNP silicon power transistor which utilizes Perforated Emitter technology, and it is specifically designed for high power audio output, disk head positioners and linear applications.

Parametrics

MJ21195 absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 250 Vdc; (2)Collector-Base Voltage VCBO: 400 Vdc; (3)Emitter-Base Voltage VEBO: 5.0 Vdc; (4)Collector-Emitter Voltage: 1.5 V VCEX 400 Vdc; (5)Collector Current, Continuous: 16 Adc; (6)Collector Current, Peak (Note 1): 30 Adc; (7)Base Current, Continuous IB: 5.0 Adc; (8)Total Power Dissipation @ TC = 25℃: 250 W; (9)Total Power Dissipation Derate Above 25℃: 1.43 W/℃; (10)Operating and Storage Junction Temperature Range:- 65 to +200℃.

Features

MJ21195 features: (1)Total Harmonic Distortion Characterized; (2)High DC Current Gain: hFE = 25 Min @ IC = 8 Adc; (3)Excellent Gain Linearity; (4)High SOA: 3 A, 80 V, 1 Second; (5)Pb-Free Packages are Available.

Diagrams

MJ21195 dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJ21195
MJ21195

ON Semiconductor

Transistors Bipolar (BJT) 16A 250V 250W PNP

Data Sheet

Negotiable 
MJ21195G
MJ21195G

ON Semiconductor

Transistors Bipolar (BJT) 16A 250V 250W PNP

Data Sheet

0-1: $2.10
1-25: $1.87
25-100: $1.47
100-500: $1.22